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APTC60DHM24T3G
Asymmetrical Bridge Super Junction MOSFET Power Module
13 14 Q1 CR3
VDSS = 600V RDSon = 24m max @ Tj = 25C ID = 95A @ Tc = 25C
Application * * * Welding converters Switched Mode Power Supplies Switched Reluctance Motor Drives
18
Features
22 19 7
*
23 8 Q4 CR2
4
3
29 15
30
31
32 16
* * * *
R1
- Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design Internal thermistor for temperature monitoring High level of integration
28 27 26 25 29 30
23 22
20 19 18 16 15
Benefits * Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS compliant
31 32 2 3 4 7 8 10 11 12
14 13
* * * * *
All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23...
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C Max ratings 600 95 70 260 20 24 462 15 3 1900 Unit V A V m W A mJ
August, 2009 1-7 APTC60DHM24T3G - Rev 1
Tc = 25C
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTC60DHM24T3G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions
VGS = 0V,VDS = 600V VGS = 0V,VDS = 600V
Min Tj = 25C Tj = 125C 2.1
Typ
VGS = 10V, ID = 47.5A VGS = VDS, ID = 5mA VGS = 20 V, VDS = 0V
3
Max 350 600 24 3.9 200
Unit A m V nA
Dynamic Characteristics
Symbol Characteristic Ciss Input Capacitance Coss Output Capacitance Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0V ; VDS = 25V f = 1MHz VGS = 10V VBus = 300V ID = 95A Inductive Switching (125C) VGS = 10V VBus = 400V ID = 95A RG = 2.5 Inductive switching @ 25C VGS = 10V ; VBus = 400V ID = 95A ; RG = 2.5 Inductive switching @ 125C VGS = 10V ; VBus = 400V ID = 95A ; RG = 2.5 Min Typ 14.4 17 300 68 102 21 30 100 45 1350 1040 2200 1270 J ns nC Max Unit nF
J
Diode ratings and characteristics
Symbol Characteristic VRRM IRM IF VF trr Qrr
Maximum Peak Repetitive Reverse Voltage
Test Conditions Tj = 25C Tj = 125C Tc = 80C IF = 60A IF = 120A IF = 60A Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
Min 600
Typ
Max 25 500
Unit V A A
Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage
VR=600V
60 1.7 2 1.4 70 140 100 690
2.3 V
August, 2009 2-7 APTC60DHM24T3G - Rev 1
Reverse Recovery Time Reverse Recovery Charge
IF = 60A VR = 400V di/dt =200A/s
ns nC
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APTC60DHM24T3G
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight CoolMOS diode 4000 -40 -40 -40 2.5 Min Typ Max 0.27 0.85 150 125 100 4.7 110 Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
To heatsink
M4
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol R25 R25/R25 B25/85 B/B Characteristic Resistance @ 25C T25 = 298.15 K TC=100C
RT = R25 T: Thermistor temperature 1 1 RT: Thermistor value at T exp B25 / 85 T - T 25
Min
Typ 50 5 3952 4
Max
Unit k % K %
SP3 Package outline (dimensions in mm)
1
12
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
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APTC60DHM24T3G - Rev 1
August, 2009
17
28
APTC60DHM24T3G
Typical CoolMOS Performance Curve
0.3 Thermal Impedance (C/W) 0.25 0.2 0.15 0.1 0.05 Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 Single Pulse 0.001 0.01 0.1 1 10
0 0.00001
rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 720 640 ID, Drain Current (A) 560 480 400 320 240 160 80 0 0 5 10 15 20 25 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current 1.3 ID, DC Drain Current (A) 1.25 1.2 1.15 1.1 1.05 1 0.95 0.9 0 40 80 120 160 200 240 280 ID, Drain Current (A)
VGS=20V Normalized to VGS=10V @ 95A VGS=10V 5V 4.5V 4V VGS=15&10V
Transfert Characteristics 280 ID, Drain Current (A) 240 200 160 120 80 40 0 0 1 2 3 4 5 6 VGS, Gate to Source Voltage (V) 7
TJ=125C TJ=25C VDS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle
6.5V 6V 5.5V
RDS(on) Drain to Source ON Resistance
DC Drain Current vs Case Temperature 100 80 60 40 20 0 25
August, 2009 4-7 APTC60DHM24T3G - Rev 1
50 75 100 125 TC, Case Temperature (C)
150
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APTC60DHM24T3G
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.1 VGS(TH), Threshold Voltage (Normalized) 1.0 0.9 0.8 0.7 0.6 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage 1000000 C, Capacitance (pF) 100000 10000 1000 100 10 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) Crss Coss Ciss 1000 ID, Drain Current (A) ON resistance vs Temperature
3.0 2.5 2.0 1.5 1.0 0.5 0.0 25 50 75 100 125 150 TJ, Junction Temperature (C)
Maximum Safe Operating Area
VGS=10V ID= 95A
100
limited by RDSon
100 s
10
Single pulse TJ=150C TC=25C
1 ms 10 ms
1 1 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) 12 10 8 6 4 2 0 0 40 80 120 160 200 240 280 320 Gate Charge (nC)
August, 2009
VDS=480V
ID=95A TJ=25C
VDS=120V VDS=300V
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APTC60DHM24T3G - Rev 1
APTC60DHM24T3G
140 120
td(on) and td(off) (ns) Delay Times vs Current 70
td(off) VDS=400V RG=2.5 TJ=125C L=100H td(on)
Rise and Fall times vs Current 60 tr and tf (ns) 50 40 30 20 10 0 tr
VDS=400V RG=2.5 TJ=125C L=100H
100 80 60 40 20 0 0
tf
20 40 60 80 100 120 140 160
ID, Drain Current (A) Switching Energy vs Current
0
20
40
60
80 100 120 140 160
ID, Drain Current (A) Switching Energy vs Gate Resistance 5 Switching Energy (mJ)
VDS=400V ID=95A TJ=125C L=100H
4 Switching Energy (mJ)
3
VDS=400V RG=2.5 TJ=125C L=100H
Eon
4 3 2 1 0
Eoff Eon
2 1
Eoff
0 0 20 40 60 80 100 120 140 160 ID, Drain Current (A)
0
5
10
15
20
25
Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 1000
TJ=150C
Operating Frequency vs Drain Current
VDS=400V D=50% RG=2.5 TJ=125C TC=75C
250 Frequency (kHz)
ZVS
IDR, Reverse Drain Current (A)
300
200 150 100 50 0 10 20
hard switching ZCS
100
TJ=25C
10
1 0.3 0.5 0.7 0.9 1.1 1.3 1.5
August, 2009
30 40 50 60 70 ID, Drain Current (A)
80
90
VSD, Source to Drain Voltage (V)
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6-7
APTC60DHM24T3G - Rev 1
APTC60DHM24T3G
Typical diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 Thermal Impedance (C/W) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.00001 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.9 0.7 0.5
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds) Forward Current vs Forward Voltage 200 trr, Reverse Recovery Time (ns) IF, Forward Current (A) 160 120 80
TJ=25C TJ=125C
175 150 125 100 75 50 0
Trr vs. Current Rate of Charge
TJ=125C VR=400V
120 A
30 A 60 A
40 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VF, Anode to Cathode Voltage (V) QRR vs. Current Rate Charge
TJ=125C VR=400V
200
400 600 800 -diF/dt (A/s)
1000 1200
QRR, Reverse Recovery Charge (C)
IRRM, Reverse Recovery Current (A)
2.0
40 35 30 25 20 15 10 5 0 0
IRRM vs. Current Rate of Charge
TJ=125C VR=400V 120 A
120 A 60 A 30 A
1.5
1.0
60 A
0.5
30 A
0.0 0 200 400 600 800 1000 1200 -diF/dt (A/s)
200
400
600
800
1000 1200
-diF/dt (A/s)
DC Forward Current vs. Case Temp. 100 80 IF (A) 60 40
Duty Cycle = 0.5 TJ=175C
Capacitance vs. Reverse Voltage 500 C, Capacitance (pF) 400 300 200 100 0 1 10 100 1000 VR, Reverse Voltage (V)
0 25 50 75 100 125 150 175 Case Temperature (C)
"COOLMOSTM comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG". Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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APTC60DHM24T3G - Rev 1
August, 2009
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